Confined epitaxial growth of InP on silicon for advanced photonic structures

Outline

This project will focus on epitaxial growth development using metal-organic chemical vapor deposition (MOCVD) to enable monolithic integration of compound semiconductors on silicon for next-generation photonic integrated circuits. Novel growth methods will be investigated to tackle the challenges associated with the material mismatch. The goal is to establish a scalable InP-on-silicon platform for advanced photonic structures. The newly established MOCVD laboratory and the Institute for Compound Semiconductors (ICS) at Cardiff University offers an excellent experimental setting for this project. The student will work within the framework of the Future Compound Semiconductor Manufacturing Hub (CS Hub, http://www.compoundsemiconductorhub.org/) which provides great opportunities to engage with industrial collaborators and other epitaxy research groups across the UK.

What is funded

Tuition fee support: Full UK/EU tuition fees

Maintenance stipend: Doctoral stipend matching UK Research Council National Minimum

Eligibility

You should have obtained, or be about to obtain a First or Upper Second Class UK Honours degree in Physics , or a related subject, Alternatively, applicants with equivalent qualifications gained outside the UK will also be considered. Applicants with a Lower Second Class degree will be considered if they also have a Master’s degree.

Applicants whose first language is not English are normally expected to meet the minimum University requirements (e.g. 6.5 IELTS)